Day 1 :
Tsinghua University, China
Time : 10:00-11:00
Xiaozhong Zhang has received his PhD in1989 from University of Oxford and Postdoc at The Royal Institution of Great Britain during 1989-1992. Then he worked as a Faculty at National University of Singapore for seven years. Since 1999 he has been working as a Professor at School of Material Science and Engineering of Tsinghua University, China. He is now the Deputy Director of the Key Laboratory of Advanced Materials of Chinese Education Ministry, member of Chinese national nano-technology standardization committee and co-editor of IUCrJ. He has published more than 190 papers in referred journals including Nature and Advanced Materials.
Coupling semiconductor nonlinear transport effect and Hall Effect in semiconductor, we developed a Si-based geometrical enhanced MR device whose room-temperature MR ratio reaching 30% at 0.065 T. We further coupled semiconductor nonlinear transport effect and anomalous Hall Effect in a Perpendicular Magnetic Anisotropic (PMA) material and realized a giant MR of 22000% at 1 mT in PMA material at room temperature. Based on our Si based MR device, we developed a current-controlled reconfigurable MR logic device, which could perform all four basic Boolean logic including AND, OR, NAND and NOR in one device. We proposed an alternative way to realize magnetic logic by coupling spin-dependent transport effect in magnetic material and nonlinear transport effect in semiconductor material. We further proposed a non-volatile reconfigurable spin logic-memory device by coupling anomalous Hall Effect in magnetic material and negative differential resistance phenomena in semiconductor. All four basic Boolean logic operations could be programmed with high output ratio (>1000%) and low magnetic field (~5 mT). This device demonstrated that non-volatile information reading, processing and writing could be realized in one step and one device. Hence, logic and non-volatile memory could be closely integrated in one chip. The time and energy used in the processes of information transformation and transfer could be saved. A network with these highly parallel logic-memory devices could perform massively parallel non-volatile computing and might offer a possible route to approach brain-inspired artificial intelligence beyond traditional CMOS route.
Time : 11:20-12:20
Sabrina Conoci has received the Master of Science in Industrial Chemistry cum laude from the University of Bologna (Italy) in 1995 and has obtained her PhD in Engineering of Materials from the University of Lecce (Italy) in 2001 working one year at the University of Ottawa (Canada). Since 1999, she has been with STMicroelectronics, Catania (Italy), covering several R&D positions in the field of nano-molecular devices, biosensors and biotechnologies. She is currently R&D Manager of the Advanced Sensor Technologies team. He has published more than 200 papers in reputed journalism, 15 international patents and more than 100 communications to international congresses.
The development of new sensing materials and integrated devices is today one of the most fascinating fields of material science. It stimulates researches for a wide range of applicative areas such as food industry, pollution environment, pharmaceutics and molecular diagnostic and in vitro devices. In this frame, the development of new Ni-based nano-materials for the non-invasive glucose monitoring and gas sensing is receiving great attention due to its high impact in health and environment areas. These materials have been widely investigated as electrodes for electro-catalytic oxidation of analytes by means of the redox couple Ni3+/Ni2+ under alkaline medium. The employment of nanostructures increases both the surface-to-volume ratio and the electron transfer rate boosting the sensing performances. In this work we report a new nanomaterial based on Ni oxide for the detection of NOx. The material exhibited good response towards NOx detection at different temperature. The main advantages of the proposed solution are the easy preparation, high stability and high conductivity which permitted to carried out sensing measurements also at RT.